DocumentCode :
1970625
Title :
Critical Study of the Saturation Drain Voltage and the Multiplication Current in MOSFETs at Liquid Helium Temperature
Author :
Simoen, E. ; Claeys, C.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2001
fDate :
11-13 September 2001
Firstpage :
195
Lastpage :
198
Keywords :
CMOS technology; Circuits; Cryogenics; Data mining; Helium; Immune system; MOSFETs; Semiconductor device modeling; Temperature; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195234
Filename :
1506616
Link To Document :
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