Critical Study of the Saturation Drain Voltage and the Multiplication Current in MOSFETs at Liquid Helium Temperature

Author

Simoen, E. ; Claeys, C.

Author_Institution

IMEC, Leuven, Belgium

fYear

2001

fDate

11-13 September 2001

Firstpage

195

Lastpage

198

Keywords

CMOS technology; Circuits; Cryogenics; Data mining; Helium; Immune system; MOSFETs; Semiconductor device modeling; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Print_ISBN

2-914601-01-8

Type

DOI

10.1109/ESSDERC.2001.195234

Filename

1506616

Link To Document