1970650

Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices

Palmer, M.J. ; Braithwaite, G. ; Prest, M.J. ; Parker, E.H.C. ; Whall, T.E. ; Zhao, Y.P. ; Kaya, S. ; Watling, J.R. ; Asenov, A. ; Barker, J.R. ; Waite, A.M. ; Evans, A.G.R.

University of Warwick, Coventry, UK

2001

11-13 September 2001

199

202

Electric variables measurement; Electron mobility; Fabrication; Germanium silicon alloys; Length measurement; MOS devices; MOSFETs; Silicon germanium; Thickness measurement; Transconductance;

English

ieee

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

2-914601-01-8

conf

10.1109/ESSDERC.2001.195235

1506617