DocumentCode
1970650
Title
Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices
Author
Palmer, M.J. ; Braithwaite, G. ; Prest, M.J. ; Parker, E.H.C. ; Whall, T.E. ; Zhao, Y.P. ; Kaya, S. ; Watling, J.R. ; Asenov, A. ; Barker, J.R. ; Waite, A.M. ; Evans, A.G.R.
Author_Institution
University of Warwick, Coventry, UK
fYear
2001
fDate
11-13 September 2001
Firstpage
199
Lastpage
202
Keywords
Electric variables measurement; Electron mobility; Fabrication; Germanium silicon alloys; Length measurement; MOS devices; MOSFETs; Silicon germanium; Thickness measurement; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN
2-914601-01-8
Type
conf
DOI
10.1109/ESSDERC.2001.195235
Filename
1506617
Link To Document