Title :
Coupling between 2D and Quantum Confinement Effects in Ultra-Short Channel Double-Gate MOSFETs
Author :
Mouis, M. ; Poncet, A.
Author_Institution :
CNRS, Grenoble, France
fDate :
11-13 September 2001
Keywords :
Carrier confinement; Electrons; Linear predictive coding; MOSFETs; Poisson equations; Potential well; Schrodinger equation; Silicon; Statistics; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195238
