Title :
High Quality Ultrathin La2O3 Films for High-k Gate Insulator
Author :
Ohmi, Shun-ichiro ; Kobayashi, Chihiro ; Aizawa, Koji ; Yamamoto, Shuu´ichirou ; Tokumitsu, Eisuke ; Ishiwara, Hiroshi ; Iwai, Hiroshi
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
fDate :
11-13 September 2001
Keywords :
Annealing; Capacitors; Dielectric substrates; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Insulation; Leakage current; Sputtering; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195244
