DocumentCode :
1970823
Title :
Selective Area Growth Of GaAs and AlGaAs with TMGa, TMAI, AsH3 and HCI by Atmospheric Pressure MOVPE
Author :
Korte, Lutz ; Thanner, Christine
Author_Institution :
SIEMENS Research Laboratories, Germany
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
99
Lastpage :
99
Keywords :
Ash; Gallium arsenide; Human computer interaction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664959
Filename :
664959
Link To Document :
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