Title :
Gate current scaling rules characterization, an efficient tool for gate oxide optimisation in 0.12 um CMOS technologies
Author :
Toren, Willem-Jan ; Arnaud, Franck
Author_Institution :
Philips Semiconductors, Crolles, France
fDate :
11-13 September 2001
Keywords :
CMOS technology; Current measurement; Digital circuits; Energy consumption; Leakage current; MOSFETs; Semiconductor device modeling; Tellurium; Thickness measurement; Transistors;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195246
