DocumentCode :
1970896
Title :
Noncontact measurement method for S parameters
Author :
Ouardirhi, Zacharia ; Laurin, Jean-Jacques
Author_Institution :
Dept. de Genie Electr., Ecole Polytech. de Montreal, Que., Canada
Volume :
3
fYear :
2003
fDate :
4-7 May 2003
Firstpage :
1885
Abstract :
A technique to measure S parameters based on close field measurements is presented. This method uses the tangential components of the radiating electric field by the device under test (OUT) for extracting an incident wave and a reflected wave. The results of the reflection coefficient and phase factor, obtained by measurement in close field, show good agreement with the measurements obtained from the access ports of the OUT. The phase factor values are compared with the values calculated with commercial microwave simulation software.
Keywords :
S-parameters; electric field measurement; microwaves; S parameters; device under test; field measurement; noncontact measurement method; phase factor; radiating electric field; reflection coefficient; tangential component; Circuit simulation; Circuit testing; Content addressable storage; Coupling circuits; Frequency; Magnetic analysis; Magnetosphere; Spatial resolution; Storage area networks; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2003. IEEE CCECE 2003. Canadian Conference on
ISSN :
0840-7789
Print_ISBN :
0-7803-7781-8
Type :
conf
DOI :
10.1109/CCECE.2003.1226280
Filename :
1226280
Link To Document :
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