• DocumentCode
    1970907
  • Title

    Behaviour of the CoolMOS device and its body diode

  • Author

    Sheng, K. ; Udrea, F. ; Amaratunga, G.A.J. ; Palmer, P.R.

  • Author_Institution
    Cambridge University, UK
  • fYear
    2001
  • fDate
    11-13 September 2001
  • Firstpage
    251
  • Lastpage
    254
  • Keywords
    Breakdown voltage; Diodes; Doping; Immune system; Insulated gate bipolar transistors; Leakage current; MOSFET circuits; Power MOSFET; Semiconductor optical amplifiers; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195248
  • Filename
    1506630
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1970907