Title :
Behaviour of the CoolMOS device and its body diode
Author :
Sheng, K. ; Udrea, F. ; Amaratunga, G.A.J. ; Palmer, P.R.
Author_Institution :
Cambridge University, UK
fDate :
11-13 September 2001
Keywords :
Breakdown voltage; Diodes; Doping; Immune system; Insulated gate bipolar transistors; Leakage current; MOSFET circuits; Power MOSFET; Semiconductor optical amplifiers; Switches;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195248
