Title :
Deep groove etching for partial reflectors in InP-based monolithically integrated photonic devices
Author :
Wang, Yin ; Wang, Lei ; Jin, Jialiang ; He, JianGÇÉJun
Author_Institution :
State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China
Abstract :
Dry etching process of InP is developed using inductively coupled plasma (ICP) with halogen and hydrocarbon based gas mixture. This recipe is optimized for deep groove etching requiring a high anisotropy and smooth surface morphology in integrated photonic device fabrication. A laser with good performance is fabricated using the etched groove as a partial reflector.
Keywords :
III-V semiconductors; gas mixtures; indium compounds; integrated optics; optical communication equipment; optical elements; optical fabrication; plasma materials processing; sputter etching; surface morphology; InP; InP-based monolithically integrated photonic devices; anisotropy; deep groove etching; dry etching process; etched groove; halogen based gas mixture; hydrocarbon based gas mixture; inductively coupled plasma; integrated photonic device fabrication; laser; partial reflectors; smooth surface morphology; Cavity resonators; Etching; Gas lasers; Iterative closest point algorithm; Optical device fabrication; Radio frequency; Substrates;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682711
