Title :
Optimized Si/SiGe notched gates for CMOS
Author :
Monfray, S. ; Julien, C. ; Ribot, P. ; Boeuf, F. ; Dutartre, D. ; Martins, J. ; Sondergard, E. ; Skotnicki, T.
Author_Institution :
France Telecom, Crolles, France
fDate :
11-13 September 2001
Keywords :
Amorphous materials; Etching; Germanium silicon alloys; MOS devices; Measurement standards; Performance evaluation; Plasma applications; Plasma materials processing; Silicon germanium; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195254
