Title :
Cryogenic Characteristics of Millimetre Wavelength Sschottky Barrier Diodes
Author_Institution :
S.R.C., Appleton Laboratory, Ditton Park, Slough SL3 9JX, U.K.
Abstract :
High quality millimetre wavelength GaAs Schottky barrier diodes of various doping levels were measured over the temperature range 12°-300°K. The temperature dependence of various diode parameters agreed with existing theory. Factors relevant to obtaining optimum low noise performance from a cryogenic mixer utilizing these diodes are discussed. Finally, microwave measurements of mixer performance at 110 GHz are presented, and compared with the theoretical expectations of low temperature operation.
Keywords :
Acoustical engineering; Cryogenics; Doping; Gallium arsenide; Schottky barriers; Schottky diodes; Temperature dependence; Temperature distribution; Temperature measurement; Wavelength measurement;
Conference_Titel :
Microwave Conference, 1977. 7th European
Conference_Location :
Copenhagen, Denmark
DOI :
10.1109/EUMA.1977.332484
