Title :
Design of RF CMOS low noise amplifiers using a current based MOSFET model
Author :
Baroncini, Virginia Helena Varotto ; Gouveia-Filho, Oscar Da Costa
Author_Institution :
Centro Fer. de Educacao Technol. do Parana, Brazil
Abstract :
This paper presents a design methodology for RF CMOS low noise amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET´s inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; integrated circuit noise; radiofrequency amplifiers; radiofrequency integrated circuits; semiconductor device models; semiconductor device noise; LNA; MOS devices; MOSFET inversion regions; RF CMOS low noise amplifier design; current based MOSFET model; induced gate noise; CMOS technology; Design methodology; Energy consumption; Integrated circuit noise; Low-noise amplifiers; MOSFET circuits; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; Transconductance;
Conference_Titel :
Integrated Circuits and Systems Design, 2004. SBCCI 2004. 17th Symposium on
Print_ISBN :
1-58113-947-0
DOI :
10.1109/SBCCI.2004.241022
