• DocumentCode
    1971182
  • Title

    A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate

  • Author

    Difrenza, R. ; Llinares, P. ; Morin, G. ; Granger, E. ; Ghibaudo, G.

  • Author_Institution
    STMicroelectronics, Crolles, France and LPCS/ENSERG, Grenoble, France
  • fYear
    2001
  • fDate
    11-13 September 2001
  • Firstpage
    299
  • Lastpage
    302
  • Keywords
    Amorphous materials; Annealing; CMOS technology; Fluctuations; Furnaces; Grain boundaries; MOSFET circuits; Predictive models; Semiconductor process modeling; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195260
  • Filename
    1506642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1971182