Title :
A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate
Author :
Difrenza, R. ; Llinares, P. ; Morin, G. ; Granger, E. ; Ghibaudo, G.
Author_Institution :
STMicroelectronics, Crolles, France and LPCS/ENSERG, Grenoble, France
fDate :
11-13 September 2001
Keywords :
Amorphous materials; Annealing; CMOS technology; Fluctuations; Furnaces; Grain boundaries; MOSFET circuits; Predictive models; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195260
