DocumentCode :
1971225
Title :
Novel Selective Area Growth of AIGaAs and AIAs with HCI Gas by MOVPE
Author :
Shimoyama, Kenji ; Fujii, Katsushi ; Gotoh, Hideki
Author_Institution :
Tsukuba Opto-Electronics Laboratory, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
102
Lastpage :
103
Keywords :
Artificial intelligence; Epitaxial growth; Epitaxial layers; Gallium arsenide; Human computer interaction; Optical device fabrication; Optical devices; Optical films; Passivation; Scanning electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664961
Filename :
664961
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1971225
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