Title :
300 GHz InP/GaAs(1-x)Sb(x)/InP DHBTs
Author :
Bolognesi, C.R. ; Dvorak, M.W. ; Pitts, O.J. ; Watkins, S.P.
Author_Institution :
Simon Fraser University, Burnaby, Canada
fDate :
11-13 September 2001
Keywords :
Cutoff frequency; Doping; Double heterojunction bipolar transistors; Electrons; Fabrication; Indium phosphide; Low voltage; MOCVD; Space charge; Thermal conductivity;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195264
