DocumentCode :
1971288
Title :
Experimental Evidence of Impact Ionisation in InP HBT´s Designed for Rapid Digital Applications: Implementation in a DC Model
Author :
Maneux, Cristell ; Martin, J.-C. ; Labat, N. ; Touboul, A. ; Riet, M. ; Benchimol, J.-L.
Author_Institution :
Universite Bordeaux 1, Talence, France
fYear :
2001
fDate :
11-13 Sept. 2001
Firstpage :
323
Lastpage :
326
Keywords :
Breakdown voltage; Contacts; Electric variables; Heterojunction bipolar transistors; Impact ionization; Indium gallium arsenide; Indium phosphide; Optical signal processing; Space charge; Time division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Conference_Location :
Nuremberg, Germany
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195266
Filename :
1506648
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1971288
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