Small-Signal Properties of Controlled Avalanche Microwave Silicon Transistors

This paper presents a study of the behaviour and capabilities of avalanching microwave transistor amplifiers through measurements carried out on transistors in small signal conditions and with common-base configuration operation. Interesting results are reported which show that a substantial improvement in gain (5 to 10 dB) can be obtained under multiplication mode. It is also shown that this improvement is strongly related to the increase of the apparent transistor multiplication factor and that it is accompanied by a moderate increase of the noise figure and a large improvement of the frequency range.