Title :
Temperature Characterization of NDR in AlGaN/GaN HFETs
Author :
Maher, H. ; Bolognesi, C.R. ; Piner, E.L.
Author_Institution :
Simon Fraser University, Burnaby, Canada
fDate :
11-13 September 2001
Keywords :
Aluminum gallium nitride; Displays; Electron mobility; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Substrates; Temperature dependence; Thermal conductivity;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195267
