Title :
Electrical detection of defects in SIMOX buried oxides: pipes and precipitates
Author :
Roitman, P. ; Edelstein, M. ; Krause, S.J.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Summary form only given. Two defect types have been identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism: the tendency of the Si-SiO/sub 2/ system at high temperature to separate into regions of Si and SiO/sub 2/, rather than forming SiO/sub x/. Below an oxygen dose of /spl sim/4/spl times/10/sup 17/ cm/sup -2/, the buried oxide is not continuous, and as the dose is lowered, the implanted region becomes a layer of SiO/sub 2/ precipitates. Above the dose of /spl sim/4/spl times/10/sup 17/ cm/sup -2/, the buried oxide is continuous, but Si precipitates /spl sim/50 nm thick are present in the oxide. This paper demonstrates techniques for the electrical detection of precipitates and pipes in low dose SIMOX buried oxides.
Keywords :
SIMOX; buried layers; crystal defects; doping profiles; flaw detection; precipitation; SIMOX buried oxide defects; SIMOX buried oxide pipe defects; SIMOX buried oxide precipitate defects; Si precipitates; Si region separation; Si-SiO/sub 2/; Si-SiO/sub 2/ system high temperature separation; SiO/sub 2/ precipitate layer; SiO/sub 2/ region separation; buried oxide; conductive silicon paths; defect types; electrical defect detection; electrical detection; implanted region; low dose SIMOX; low dose SIMOX buried oxides; noncontinuous buried oxide; oxygen dose; pipe defects; silicon precipitates; Capacitors; Electric breakdown; Silicon;
Conference_Titel :
SOI Conference, 1998. Proceedings., 1998 IEEE International
Conference_Location :
Stuart, FL, USA
Print_ISBN :
0-7803-4500-2
DOI :
10.1109/SOI.1998.723164
