• DocumentCode
    1971493
  • Title

    Comparison of TiO2-doped SiO2 films from two organosilicon precursors

  • Author

    Bange, Jaspal P. ; Patil, Lalit S. ; Gautam, D.K.

  • Author_Institution
    Dept. of Electron. Eng., Gunma Univ., Kiryu, Japan
  • fYear
    2010
  • fDate
    8-12 Dec. 2010
  • Firstpage
    242
  • Lastpage
    243
  • Abstract
    In present work the effect of two different source of silicon Tetraethylorthosilicate and Octamethylcyclotetrasiloxane on TiO2-doped SiO2 films have been studied. The study reveals that film properties depend on the precursors used for deposition. The optical, chemical and surface properties have been characterized using ellipsometer and SEM with EDAX.
  • Keywords
    X-ray chemical analysis; ellipsometry; liquid phase deposition; scanning electron microscopy; silicon compounds; surface morphology; thin films; titanium compounds; EDAX; SEM; SiO2:TiO2; chemical properties; ellipsometry; flame hydrolysis deposition; octamethylcyclotetra-siloxane; optical properties; organosilicon precursors; surface morphology; surface properties; tetraethylorthosilicate; thin film properties; Ellipsometry; Fires; Optical films; Optical waveguides; Silicon; X-ray scattering; Octamethylcyclotetrasiloxane; Tetraetylorthosilicate; TiO2-doped SiO2;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-7111-9
  • Type

    conf

  • DOI
    10.1109/ACP.2010.5682745
  • Filename
    5682745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1971493