• DocumentCode
    1971679
  • Title

    Elimination of stress induced silicon defects in very high density SRAM structures

  • Author

    Ferreira, P. ; Bianchi, R.-A. ; Guyader, F. ; Pantel, R. ; Granger, E.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2001
  • fDate
    11-13 September 2001
  • Firstpage
    427
  • Lastpage
    430
  • Keywords
    Fabrication; Leakage current; Microelectronics; Oxidation; Random access memory; Rapid thermal processing; Research and development; Silicon; Testing; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195292
  • Filename
    1506674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1971679