A High-Efficiency SiC MESFET Power Amplifier Based on Class-F Configuration

Author

Lee, Yong-Sub ; Lee, Mun-Woo ; Jung, Sung-Woo ; Jeong, Yoon-Ha

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

This paper reports a high efficiency power amplifier (PA), which is based on the class-F configuration using the composite right/left-handed transmission lines as the harmonic trap. Also, the compensation elements with the series capacitor and shunt inductor are used to compensate for the internal parasitic components of the packaged active device in the class-F PA design. To verify this method, a class-F PA is designed using a 10-W PEP SiC MESFET and tested for a continuous wave at WCDMA band of 2.14 GHz. From the measured results, the power-added efficiency (PAE) of 70.1% with a gain of 10.4 dB is achieved at an output power of 40.4 dBm.

Keywords

MESFET circuits; power amplifiers; transmission lines; MESFET power amplifier; class-F power amplifier; compensation element; continuous wave; frequency 2.14 GHz; harmonic trap; packaged active device; power-added efficiency; series capacitor; shunt inductor; transmission lines; Active inductors; Capacitors; High power amplifiers; MESFETs; Packaging; Power system harmonics; Power transmission lines; Shunt (electrical); Silicon carbide; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4554587

Filename

4554587