DocumentCode :
1971705
Title :
Microwave FET´s - What´s Next?
Author :
Liechti, Charles A.
Author_Institution :
Hewlett-Packard Company, Solid State Laboratory, Palo Alto, CA 94304.
fYear :
1978
fDate :
4-8 Sept. 1978
Firstpage :
47
Lastpage :
52
Abstract :
Over the last decade, GaAs FET\´s have made dramatic advances in low-noise and efficient power amplification. These advances are highlighted and possible pathways for future developments are shown. Looking further ahead, it is important to realize that GaAs technology holds the key to microwave monolithic-integrated circuits.** "Where are GaAs IC\´s today, and where do we go from here?" These and related questions are briefly covered in this paper.
Keywords :
Bandwidth; Circuit noise; Gain; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave circuits; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
Type :
conf
DOI :
10.1109/EUMA.1978.332511
Filename :
4131163
Link To Document :
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