Title :
Microwave FET´s - What´s Next?
Author :
Liechti, Charles A.
Author_Institution :
Hewlett-Packard Company, Solid State Laboratory, Palo Alto, CA 94304.
Abstract :
Over the last decade, GaAs FET\´s have made dramatic advances in low-noise and efficient power amplification. These advances are highlighted and possible pathways for future developments are shown. Looking further ahead, it is important to realize that GaAs technology holds the key to microwave monolithic-integrated circuits.** "Where are GaAs IC\´s today, and where do we go from here?" These and related questions are briefly covered in this paper.
Keywords :
Bandwidth; Circuit noise; Gain; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave circuits; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1978.332511