مرکز منطقه ای اطلاع رساني علوم و فناوري - SiGe-Bipolartransistors with Selectively Grown Base: Influence of Growth and Layout on Electrical Parameters

DocumentCode :

1971772

Title :

SiGe-Bipolartransistors with Selectively Grown Base: Influence of Growth and Layout on Electrical Parameters

Author :

Wolf, K. ; Klein, W. ; Berthold, A. ; Grondahl, S. ; Huttner, T. ; Drexl, S. ; Seck, M. ; Lachner, R.

Author_Institution :

Infineon Technologies, Munich, Germany

fYear :

2001

fDate :

11-13 September 2001

Firstpage :

447

Lastpage :

450

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Print_ISBN :

2-914601-01-8

Type :

conf

DOI :

10.1109/ESSDERC.2001.195297

Filename :

1506679

Link To Document :