DocumentCode :
1971825
Title :
Characterization of the Gate SiO2 /Channel-Si Interface in Thin-gate SiO2 MOSFETs by Low Frequency Noise and Charge Pumping Techniques
Author :
Szewczyk, A. ; Ghibaudo, G. ; Ernst, T. ; Leroux, C. ; Chroboczek, J.A.
Author_Institution :
Technical University of Gdansk, Poland
fYear :
2001
fDate :
11-13 September 2001
Firstpage :
455
Lastpage :
458
Keywords :
Charge pumps; Low-frequency noise; MOSFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195299
Filename :
1506681
Link To Document :
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