• DocumentCode
    1971830
  • Title

    Strain contrast of dilute semiconductor GaN1-xAsx and Si1-yCy hetero-epitaxial films in annular dark field images

  • Author

    Wu, X. ; Baribeau, J.M. ; Gupta, J.A.

  • Author_Institution
    Inst. for Microstruct. Sci., Nat. Res. Council Canada, Ottawa, ON, Canada
  • fYear
    2009
  • fDate
    30-3 Aug. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The lower average atomic number strained GaNxAs1-x (x = 0.029 and 0.045) and Si1-yCy (y les 0.015) films were found to be brighter than the higher average atomic number GaAs and Si in annular dark field (ADF) images.
  • Keywords
    III-V semiconductors; epitaxial layers; gallium arsenide; gallium compounds; silicon compounds; wide band gap semiconductors; GaAs; GaNAs; SiC; annular dark field images; average atomic number; dilute semiconductor; hetero-epitaxial films; strain contrast; Atomic layer deposition; Atomic measurements; Capacitive sensors; Detectors; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Semiconductor films; Silicon carbide; Substrates; ADF-STEM; Dilute semiconductor strained film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3829-7
  • Electronic_ISBN
    978-1-4244-3830-3
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2009.5292215
  • Filename
    5292215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1971830