DocumentCode :
1971845
Title :
Single Trap Characterization in 50nm MOS Transistors by Charge Pumping Measurements
Author :
Militaru, L. ; Masson, P. ; Celibart, V. ; Leroux, C.
Author_Institution :
LPM-INSA, Villeurbanne, France
fYear :
2001
fDate :
11-13 September 2001
Firstpage :
459
Lastpage :
462
Keywords :
Charge measurement; Charge pumps; Current measurement; Electron traps; Energy capture; Energy states; Filling; Length measurement; MOSFETs; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195300
Filename :
1506682
Link To Document :
بازگشت