Title :
Design and fabrication of 980nm three-active regions high power semiconductor lasers
Author :
Wang, Zhiqun ; Zhang, Lei ; Cui, Bifeng ; Shen, Guangdi
Author_Institution :
Beijing Optoelectron. Technol. Lab., Beijing Univ. of Technol., Beijing, China
Abstract :
Based on the principle of tunnel regeneration, three-active regions high power semiconductor lasers were designed and fabricated. Powered by pulse currents limited at 30 A, the emitting wavelength of 998 nm, the optical power output of 40.48 W, Ith of 7.95 A and the differential efficiency of 1.62 W/A were obtained.
Keywords :
aluminium compounds; gallium arsenide; optical fabrication; semiconductor lasers; AlGaAs-GaAs; emitting wavelength; optical power output; power 40.48 W; pulse currents; three-active region high power semiconductor lasers; tunnel regeneration; wavelength 998 nm; Biomedical optical imaging; Doping; Gallium arsenide; Laser theory; Optical design; Optical device fabrication; Optical pumping; Power lasers; Quantum cascade lasers; Semiconductor lasers; AlGaAs/GaAs; high power; semiconductor laser;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292217
