DocumentCode :
1971937
Title :
A Model of Transport Phenomena and Chemical Reactions in Atomic Layer Epitaxy
Author :
Merchant, Tushar P. ; Jensen, Klavs F.
Author_Institution :
Departments of Chemical Engineering and Materials Science and Engineering, Massachusetts Institute of Technology
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
107
Lastpage :
108
Keywords :
Atomic layer deposition; Chemicals; Chemistry; Epitaxial growth; Gallium arsenide; Heat transfer; Inductors; Materials science and technology; Semiconductor process modeling; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664964
Filename :
664964
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1971937
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