Title :
Effects of Grain-Boundaries in Excimer-Laser Crystallized Poly-Si Thin-Film Transistors
Author :
Ishihara, Ryoichi
Author_Institution :
Delft University of Technology, The Netherlands
fDate :
11-13 September 2001
Keywords :
Active matrix liquid crystal displays; Annealing; Crystallization; Driver circuits; Etching; Grain boundaries; Grain size; Plasma temperature; Semiconductor films; Thin film transistors;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195305
