Title :
Enhancement of AsH3 Decomposition on Highly Doped p-GaAs Surface Observed by Surface Photo-Aborption
Author :
Kobayashi, Naoki ; Yamauchi, Yoshiharu
Author_Institution :
NTT Basic Research Laboratories, Tokyo
Keywords :
Ash; Charge transfer; Electrons; Epitaxial growth; Gallium arsenide; Reflectivity; Space charge; Substrates; Temperature;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664965
