Title :
Recent advances in dielectric breakdown of modern gate dielectrics
Author :
Wu, E.Y. ; Suñe, Jordi
Author_Institution :
Syst. & Technol. Group, IBM Semicond. R&D Center, Essex Junction, VT, USA
Abstract :
In this talk, we first review the first BD and post BD statistics of high-k/SiO2 bilayer films (or high-κ stacks) by delineating similarities and differences from SiO2 single-layer films. Then, we will discuss the recent progress on TDDB voltage and temperature dependence in a two-step model of species-release and reaction process. This model is found to be applicable to both SiO2 and high-κ stacks (pFET inversion mode) and provide a sound physical picture for overall BD process. Finally, we will highlight the challenges in AC TDDB reliability, specifically related to nFET inversion mode of high-k stacks.
Keywords :
electric breakdown; field effect transistors; semiconductor device breakdown; silicon compounds; SiO2; TDDB voltage; bilayer films; dielectric breakdown; high-κ stacks; modern gate dielectrics; nFET; pFET; single-layer films; Acceleration; Data models; Dielectrics; High K dielectric materials; Logic gates; Stress; Temperature dependence;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804141
