• DocumentCode
    1972144
  • Title

    Constant shape factor frequency modulated charge pumping (FMCP)

  • Author

    Ryan, J.T. ; Campbell, J.P. ; Zou, Jingxin ; Cheung, K.P. ; Southwick, Richard G. ; Oates, Anthony S. ; Huang, R.

  • Author_Institution
    Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
  • fYear
    2013
  • fDate
    13-17 Oct. 2013
  • Firstpage
    21
  • Lastpage
    25
  • Abstract
    We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a constant shape factor methodology to suppress this component such that frequency-modulated charge pumping is well positioned for advanced device defect characterization.
  • Keywords
    MOSFET; leakage currents; semiconductor device breakdown; semiconductor device reliability; advanced device defect characterization; constant shape factor methodology; frequency-dependent gate leakage current component; frequency-modulated charge pumping; Charge measurement; Charge pumps; Current measurement; Frequency measurement; Leakage currents; Logic gates; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4799-0350-4
  • Type

    conf

  • DOI
    10.1109/IIRW.2013.6804146
  • Filename
    6804146
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1972144