Title :
Constant shape factor frequency modulated charge pumping (FMCP)
Author :
Ryan, J.T. ; Campbell, J.P. ; Zou, Jingxin ; Cheung, K.P. ; Southwick, Richard G. ; Oates, Anthony S. ; Huang, R.
Author_Institution :
Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
Abstract :
We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a constant shape factor methodology to suppress this component such that frequency-modulated charge pumping is well positioned for advanced device defect characterization.
Keywords :
MOSFET; leakage currents; semiconductor device breakdown; semiconductor device reliability; advanced device defect characterization; constant shape factor methodology; frequency-dependent gate leakage current component; frequency-modulated charge pumping; Charge measurement; Charge pumps; Current measurement; Frequency measurement; Leakage currents; Logic gates; Shape;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804146
