• DocumentCode
    1972227
  • Title

    1.55µm photoluminescent iron silicide prepared by thermal diffusion of Iron nanoparticles into Si Substrate

  • Author

    Pai, Yi-Hao ; Cheng, Kuang-Nan ; Lin, Gong-Ru

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2010
  • fDate
    8-12 Dec. 2010
  • Firstpage
    166
  • Lastpage
    167
  • Abstract
    The iron silicide thin-films prepared by thermal diffusion of Iron nanoparticles into Si Substrate at 900°C in pure N2 environment is demonstrated to show strong room-temperature photoluminescence (PL) at 1.55 μm. The increase of iron nanoparticle concentration from 7.4 wt% to 19 wt% further effectively enhances the room-temperature PL intensity.
  • Keywords
    iron compounds; liquid phase deposition; photoluminescence; thermal diffusion; thin films; FeSi2; Si; iron nanoparticles; iron silicide thin-films; photoluminescent iron silicide; temperature 293 K to 298 K; temperature 900 degC; thermal diffusion; wavelength 1.55 mum; Annealing; Iron; Nanoparticles; Photoluminescence; Silicides; Silicon; Substrates; Iron silicide; iron nanoparticle; photoluminescence; thermal diffusion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-7111-9
  • Type

    conf

  • DOI
    10.1109/ACP.2010.5682783
  • Filename
    5682783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1972227