RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

Author

Roll, Guntrade ; Egard, Mikael ; Johannson, Sofia ; Ohlsson, Lars ; Wernersson, Lars-Erik ; Lind, Erik

Author_Institution

Electr. & Inf. Technol., Lund Univ., Lund, Sweden

fYear

2013

fDate

13-17 Oct. 2013

Firstpage

38

Lastpage

41

Abstract

A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al₂O₃/HfO₂ gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.

Keywords

III-V semiconductors; MOSFET; alumina; gallium arsenide; hafnium compounds; high-k dielectric thin films; indium compounds; semiconductor device breakdown; semiconductor device reliability; Al₂O₃-HfO₂; DC gate voltage stress; DC transconductance; InGaAs; RF reliability; gate dielectric; high-frequency characteristics; high-frequency measurements; nMOSFETs; stress induced border traps; threshold voltage; transconductance frequency dispersion; transconductance shift; High K dielectric materials; Human computer interaction; Logic gates; MOSFET; Radio frequency; Stress; Transconductance; InGaAs; MOSFET; RF; high-k; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4799-0350-4

Type

conf

DOI

10.1109/IIRW.2013.6804151

Filename

6804151