Title :
Light extraction behavior of GaN-based light-emitting diodes with different substrate conditions; nano-size and micro-sized sapphire substrates??
Author :
Kim, Sang-Mook ; Oh, Hwa Sub ; Lee, Kwang Cheol ; Baek, Jong Hyeob
Author_Institution :
Korea Photonics Technol. Inst. (KOPTI), Gwangju, South Korea
Abstract :
We fabricated InxGa1-xN multiple quantum well (MQW) light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs); the nano-sized PSS (NPSS) and the micro-sized PSS (MPSS), and investigated to enhance the light extraction efficiency (LEE) of LEDs. Furthermore, the micro-Raman and ER spectroscopy were used to compare the strain and piezoelectric fields in the InxGa1-xN MQWs grown on the different substrate conditions. The light output power (at 20 mA) of the MPSS and NPSS are 11.4 mW and 11.6 mW, which are enhanced by 39% and 41% compared with that of the conventional LED, respectively.
Keywords :
III-V semiconductors; Raman spectra; gallium compounds; indium compounds; light emitting diodes; piezoelectricity; sapphire; semiconductor quantum wells; wide band gap semiconductors; Al2O3; ER spectroscopy; InGaN; current 20 mA; light emitting diodes; light extraction efficiency; microRaman spectroscopy; microsized substrates; multiple quantum well; nanosize substrates; piezoelectric fields; power 11.4 mW; power 11.6 mW; strain; Gallium nitride; Light emitting diodes; Optical device fabrication; Optical scattering; Power generation; Quantum well devices; Substrates;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682784
