Title :
Self-assembled InAs/GaAs quantum dot molecules with InxGa1−xAs strain-reducing layer
Author :
Yu, Y. ; Huang, L.R. ; Tian, P. ; Huang, D.X.
Author_Institution :
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
Self-assembled lateral InAs quantum dot molecules (QDMs) with InxGa1-xAs strain-reducing layer are grown by metal-organic chemical vapor deposition. A redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; red shift; self-assembly; semiconductor growth; semiconductor quantum dots; InxGa1-xAs; InAs-GaAs; broadband optical devices; emission wavelength; metal-organic chemical vapor deposition; redshift; self-assembled quantum dot molecules; strain-reducing layer; wideband photoluminescence spectra; Gallium arsenide; Indium gallium arsenide; Optical devices; Quantum dots; Self-assembly; Temperature; Temperature measurement;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682785
