DocumentCode :
1972348
Title :
High Mobility and Low Interface Recombination Velocity GaAs/AlxGa1-xAs Heterointerfaces Grown by MOVPE
Author :
Kuech, T.F. ; Wolford, D.J. ; Gilliland, G.D. ; Bradley, J.A.
Author_Institution :
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
114
Lastpage :
114
Keywords :
Chemical engineering; Epitaxial growth; Epitaxial layers; Gallium arsenide; Inorganic materials; Optical buffering; Optical materials; Organic materials; Spontaneous emission; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664968
Filename :
664968
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1972348
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