DocumentCode :
1972400
Title :
Dependence of the filament resistance on the duration of current overshoot
Author :
Shrestha, P. ; Nminibapiel, D. ; Campbell, J.P. ; Cheung, K.P. ; Baumgart, Helmut ; Deora, S. ; Bersuker, Gennadi
Author_Institution :
Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
fYear :
2013
fDate :
13-17 Oct. 2013
Firstpage :
55
Lastpage :
58
Abstract :
The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resistance is found to be affected by the duration of the overshoot caused by the parasitic capacitance.
Keywords :
electric resistance; hafnium compounds; random-access storage; HfO2; RRAM; conductive filament; current overshoot; filament resistance; nonvolatile resistance change memory; overshoot amplitude; parasitic capacitance; Capacitors; Current measurement; Hafnium compounds; Parasitic capacitance; Resistance; Switches; RESET current; RRAM; current overshoot;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4799-0350-4
Type :
conf
DOI :
10.1109/IIRW.2013.6804158
Filename :
6804158
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1972400
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