• DocumentCode
    1972534
  • Title

    A unified model for AC bias temperature instability

  • Author

    Wirth, Glen ; Franco, Jacopo ; Kaczer, Ben

  • Author_Institution
    Electr. Eng. Dept., PGEE & PGMicro Porto Alegre, Porto Alegre, Brazil
  • fYear
    2013
  • fDate
    13-17 Oct. 2013
  • Firstpage
    84
  • Lastpage
    87
  • Abstract
    Usually AC Bias Temperature Instability is modeled as consisting of a recoverable and a permanent component, assuming these components originate from different physical mechanisms. In this work we introduce a model based on charge trapping and detrapping that can properly account for both components. Under switching bias (AC stress), fast traps are able to follow the bias point change, while slow traps act according to an equivalent time constant, not being able to follow the bias point change. We present an extension to our previous model to properly account for these effects, and we provide a simple compact model to help circuit designers to cope with both components of BTI due to charge trapping. Model is validated by comparison to experimental data and Monte Carlo simulations.
  • Keywords
    MOSFET; Monte Carlo methods; electron traps; semiconductor device models; semiconductor device reliability; switching circuits; AC bias temperature instability; AC stress; Monte Carlo simulations; bias point change; charge detrapping; charge trapping; equivalent time constant; fast traps; switching bias; Charge carrier processes; Equations; Logic gates; Mathematical model; Monte Carlo methods; Stress; Switches; BTI charge trapping; MOSFET; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4799-0350-4
  • Type

    conf

  • DOI
    10.1109/IIRW.2013.6804164
  • Filename
    6804164