DocumentCode :
1972534
Title :
A unified model for AC bias temperature instability
Author :
Wirth, Glen ; Franco, Jacopo ; Kaczer, Ben
Author_Institution :
Electr. Eng. Dept., PGEE & PGMicro Porto Alegre, Porto Alegre, Brazil
fYear :
2013
fDate :
13-17 Oct. 2013
Firstpage :
84
Lastpage :
87
Abstract :
Usually AC Bias Temperature Instability is modeled as consisting of a recoverable and a permanent component, assuming these components originate from different physical mechanisms. In this work we introduce a model based on charge trapping and detrapping that can properly account for both components. Under switching bias (AC stress), fast traps are able to follow the bias point change, while slow traps act according to an equivalent time constant, not being able to follow the bias point change. We present an extension to our previous model to properly account for these effects, and we provide a simple compact model to help circuit designers to cope with both components of BTI due to charge trapping. Model is validated by comparison to experimental data and Monte Carlo simulations.
Keywords :
MOSFET; Monte Carlo methods; electron traps; semiconductor device models; semiconductor device reliability; switching circuits; AC bias temperature instability; AC stress; Monte Carlo simulations; bias point change; charge detrapping; charge trapping; equivalent time constant; fast traps; switching bias; Charge carrier processes; Equations; Logic gates; Mathematical model; Monte Carlo methods; Stress; Switches; BTI charge trapping; MOSFET; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4799-0350-4
Type :
conf
DOI :
10.1109/IIRW.2013.6804164
Filename :
6804164
Link To Document :
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