DocumentCode
1972534
Title
A unified model for AC bias temperature instability
Author
Wirth, Glen ; Franco, Jacopo ; Kaczer, Ben
Author_Institution
Electr. Eng. Dept., PGEE & PGMicro Porto Alegre, Porto Alegre, Brazil
fYear
2013
fDate
13-17 Oct. 2013
Firstpage
84
Lastpage
87
Abstract
Usually AC Bias Temperature Instability is modeled as consisting of a recoverable and a permanent component, assuming these components originate from different physical mechanisms. In this work we introduce a model based on charge trapping and detrapping that can properly account for both components. Under switching bias (AC stress), fast traps are able to follow the bias point change, while slow traps act according to an equivalent time constant, not being able to follow the bias point change. We present an extension to our previous model to properly account for these effects, and we provide a simple compact model to help circuit designers to cope with both components of BTI due to charge trapping. Model is validated by comparison to experimental data and Monte Carlo simulations.
Keywords
MOSFET; Monte Carlo methods; electron traps; semiconductor device models; semiconductor device reliability; switching circuits; AC bias temperature instability; AC stress; Monte Carlo simulations; bias point change; charge detrapping; charge trapping; equivalent time constant; fast traps; switching bias; Charge carrier processes; Equations; Logic gates; Mathematical model; Monte Carlo methods; Stress; Switches; BTI charge trapping; MOSFET; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4799-0350-4
Type
conf
DOI
10.1109/IIRW.2013.6804164
Filename
6804164
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