Title :
Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB
Author :
Cochrane, Corey J. ; Lenahan, Patrick M.
Author_Institution :
Eng. Sci., Pennsylvania State Univ., University Park, PA, USA
Abstract :
This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.
Keywords :
MOSFET; elemental semiconductors; negative bias temperature instability; resonant tunnelling; semiconductor device breakdown; semiconductor device reliability; silicon; silicon compounds; MOSFETs; NBTI; Si-SiO2; TDDB; film dielectrics; negative bias temperature instability; spin dependent recombination; spin dependent tunneling; time dependent dielectric breakdown; zero-low field detection technique; Dielectrics; MOSFET; Magnetic field measurement; Magnetic fields; Magnetic resonance; Radiative recombination; Silicon; bias temperature instability; electrically detected magnetic resonance; spin dependent recombination; spin dependent tunneling; time dependent dielectric breakdown;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804165
