Title :
Unusual bias temperature instability in SiC DMOSFET
Author :
Chbili, Zakariae ; Cheung, K.P. ; Campbell, P. ; Suehle, John S. ; Ioannou, Dimitris E. ; Ryu, Sei-Hyung ; Lelis, Aivars J.
Author_Institution :
Semicond. & Dimensional Metrol. Div, NIST, Gaithersburg, MD, USA
Abstract :
We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.
Keywords :
hole traps; power MOSFET; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC DMOSFET transistor; SiO2-SiC; hole trap density; unusual bias temperature instability; Hysteresis; Logic gates; Mobile communication; Silicon carbide; Stress; Temperature; Threshold voltage; BTI; DMOSFET; SiC;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804166
