Design of Low Noise Amplifier in Common-Gate Configuration for Ultra-Wideband Applications

Author

Kao, Yao Huang ; Hsieh, Chia Hung

Author_Institution

Dept. of Commun. Eng., Chung Hua Univ., Hsinchu

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

A new 3-10 GHz ultra-wide-band (UWB) low noise amplifier (LNA) is designed in TSMC 0.18 um CMOS process. Reactive matching of common gate configuration is extended to wide bandwidth using the Butterworth filter. A systematic approach to design a wide band low noise amplifiers is especially emphasized. The amplifier with on-chip filter spanning 3-10 GHz delivers 7 dB gain, 4 dB noise figure, and -2 dBm input IP3 at 6 GHz, with power consumption 7.6 mW. The input and output return loss (Sll and S22) are verified to be less than -10 dB. The comparisons of the measurement results are also indicated.

Keywords

Butterworth filters; CMOS integrated circuits; low noise amplifiers; ultra wideband technology; Butterworth filter; CMOS; TSMC; common-gate configuration; low noise amplifier; reactive matching; ultra-wideband applications; Band pass filters; Broadband amplifiers; CMOS process; Capacitance; Frequency; Impedance matching; Low-noise amplifiers; Matched filters; Noise figure; Ultra wideband technology; Low-noise amplifier; Ultra-wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4554629

Filename

4554629