DocumentCode
1972653
Title
X-Band GaAs Mesfet Oscillators for MIC Purposes
Author
Stahlmann, R.
Author_Institution
Institute of Semiconductor electronics, Technical University Aachen, Templergraben 55, D-5100 Aachen, FRG
fYear
1978
fDate
4-8 Sept. 1978
Firstpage
253
Lastpage
258
Abstract
GaAs MESFETs with 200 ¿m gate width were examined for MIC oscillator purposes without using external high Q-resonators. Using the small signal equivalent circuit with 15 elements valid up to the x-band the small signal parameters were derived for different oscillator circuits. The field effect transistor was tested in common source, common gate and common drain operation.
Keywords
Capacitance; Equivalent circuits; FETs; Feeds; Frequency; Gallium arsenide; MESFETs; Microwave integrated circuits; Microwave oscillators; Reflection;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1978. 8th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1978.332495
Filename
4131210
Link To Document