• DocumentCode
    1972653
  • Title

    X-Band GaAs Mesfet Oscillators for MIC Purposes

  • Author

    Stahlmann, R.

  • Author_Institution
    Institute of Semiconductor electronics, Technical University Aachen, Templergraben 55, D-5100 Aachen, FRG
  • fYear
    1978
  • fDate
    4-8 Sept. 1978
  • Firstpage
    253
  • Lastpage
    258
  • Abstract
    GaAs MESFETs with 200 ¿m gate width were examined for MIC oscillator purposes without using external high Q-resonators. Using the small signal equivalent circuit with 15 elements valid up to the x-band the small signal parameters were derived for different oscillator circuits. The field effect transistor was tested in common source, common gate and common drain operation.
  • Keywords
    Capacitance; Equivalent circuits; FETs; Feeds; Frequency; Gallium arsenide; MESFETs; Microwave integrated circuits; Microwave oscillators; Reflection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1978. 8th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1978.332495
  • Filename
    4131210