Title :
X-Band GaAs Mesfet Oscillators for MIC Purposes
Author_Institution :
Institute of Semiconductor electronics, Technical University Aachen, Templergraben 55, D-5100 Aachen, FRG
Abstract :
GaAs MESFETs with 200 ¿m gate width were examined for MIC oscillator purposes without using external high Q-resonators. Using the small signal equivalent circuit with 15 elements valid up to the x-band the small signal parameters were derived for different oscillator circuits. The field effect transistor was tested in common source, common gate and common drain operation.
Keywords :
Capacitance; Equivalent circuits; FETs; Feeds; Frequency; Gallium arsenide; MESFETs; Microwave integrated circuits; Microwave oscillators; Reflection;
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1978.332495
