• DocumentCode
    1972657
  • Title

    Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers

  • Author

    Chen, Keyong ; Feng, Xue ; Huang, Yidong

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2010
  • fDate
    8-12 Dec. 2010
  • Firstpage
    118
  • Lastpage
    119
  • Abstract
    Layer-thickness dependence of Si-nanocrystal formation in amorphous Si/SiO2 multilayers during thermal annealing is experimentally demonstrated with RF-sputtered samples, and further explained by a modified model. The theoretical calculation shows that there is a lower limit (1.5nm) of Si layer thickness and lateral growth of Si-nanocrystal is unconstrained in such multilayers.
  • Keywords
    annealing; elemental semiconductors; multilayers; nanostructured materials; silicon; silicon compounds; sputter deposition; RF sputtering; Si-SiO2; amorphous multilayers; lateral growth; layer thickness; nanocrystals; thermal annealing; Nanocrystals; Nonhomogeneous media; Optical films; Rapid thermal annealing; Shape; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-7111-9
  • Type

    conf

  • DOI
    10.1109/ACP.2010.5682807
  • Filename
    5682807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1972657