Title :
Layer-thickness-dependent formation of Si-nanocrystals embedded in amorphous Si/SiO2 multilayers
Author :
Chen, Keyong ; Feng, Xue ; Huang, Yidong
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
Layer-thickness dependence of Si-nanocrystal formation in amorphous Si/SiO2 multilayers during thermal annealing is experimentally demonstrated with RF-sputtered samples, and further explained by a modified model. The theoretical calculation shows that there is a lower limit (1.5nm) of Si layer thickness and lateral growth of Si-nanocrystal is unconstrained in such multilayers.
Keywords :
annealing; elemental semiconductors; multilayers; nanostructured materials; silicon; silicon compounds; sputter deposition; RF sputtering; Si-SiO2; amorphous multilayers; lateral growth; layer thickness; nanocrystals; thermal annealing; Nanocrystals; Nonhomogeneous media; Optical films; Rapid thermal annealing; Shape; Silicon;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682807
