• DocumentCode
    1972697
  • Title

    Using operating point-dependent degradation and gm/ID method for aging-aware design

  • Author

    Hellwege, Nico ; Heidmann, Nils ; Peters-Drolshagen, D. ; Paul, Sudipta

  • Author_Institution
    Inst. of Electrodynamics & Microelectron. (ITEM.me), Univ. of Bremen, Bremen, Germany
  • fYear
    2013
  • fDate
    13-17 Oct. 2013
  • Firstpage
    113
  • Lastpage
    116
  • Abstract
    Effects like NBTI and HCI are degrading the characteristics of analog circuits. Available countermeasures to maintain system performances often include the use of optimizers or other external tools to size devices appropriately, which give no insight in relations between degradation and circuit parameters for the designer. This paper proposes an extension of the gm/ID sizing method by considering aged transistor parameters for fresh circuit design. A possible usage scenario for this investigation is given by optimizing a simple circuit towards higher reliability. The degradation in amplification of a common source amplifier is reduced by 19 % for a full time operation of 10 years.
  • Keywords
    MOSFET; ageing; integrated circuit design; integrated circuit reliability; semiconductor device reliability; HCI; NBTI; aged transistor parameters; aging-aware design; analog circuits; circuit design; operating point-dependent degradation; reliability; Aging; Degradation; Integrated circuits; MOSFET; Reliability; Aging; Analog; EKV; HCI; NBTI; Reliability Degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4799-0350-4
  • Type

    conf

  • DOI
    10.1109/IIRW.2013.6804172
  • Filename
    6804172