DocumentCode :
1972697
Title :
Using operating point-dependent degradation and gm/ID method for aging-aware design
Author :
Hellwege, Nico ; Heidmann, Nils ; Peters-Drolshagen, D. ; Paul, Sudipta
Author_Institution :
Inst. of Electrodynamics & Microelectron. (ITEM.me), Univ. of Bremen, Bremen, Germany
fYear :
2013
fDate :
13-17 Oct. 2013
Firstpage :
113
Lastpage :
116
Abstract :
Effects like NBTI and HCI are degrading the characteristics of analog circuits. Available countermeasures to maintain system performances often include the use of optimizers or other external tools to size devices appropriately, which give no insight in relations between degradation and circuit parameters for the designer. This paper proposes an extension of the gm/ID sizing method by considering aged transistor parameters for fresh circuit design. A possible usage scenario for this investigation is given by optimizing a simple circuit towards higher reliability. The degradation in amplification of a common source amplifier is reduced by 19 % for a full time operation of 10 years.
Keywords :
MOSFET; ageing; integrated circuit design; integrated circuit reliability; semiconductor device reliability; HCI; NBTI; aged transistor parameters; aging-aware design; analog circuits; circuit design; operating point-dependent degradation; reliability; Aging; Degradation; Integrated circuits; MOSFET; Reliability; Aging; Analog; EKV; HCI; NBTI; Reliability Degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4799-0350-4
Type :
conf
DOI :
10.1109/IIRW.2013.6804172
Filename :
6804172
Link To Document :
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