Title :
An Analytical Drain Current Model for AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET): A Comparative Study with Conventional HFETs for High Power Microwave Applications
Author :
Aggarwal, Ruchika ; Gupta, Mridula ; Gupta, R.S. ; Agrawal, Anju
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi, New Delhi
Abstract :
An analytical drain current model of a novel device architecture- AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET) has been presented to assess the microwave performance of the device for sub micron gate lengths. The model has a broad utility as it is equally applicable to HFETs as well. Both the structures have been extensively studied and a comparison is made between them. The proposed model is capable of modeling electrical characteristics like sheet carrier density, threshold voltage, drain current, cut-off frequency, etc. The MISHFET shows a considerable 36% increase in drain saturation current. The results obtained are compared with experimental data & show excellent agreement.
Keywords :
MISFET; high electron mobility transistors; AlGaN-GaN; HFET; drain current model; drain saturation current; metal insulator semiconductor heterostructure field effect transistor; microwave application; Aluminum gallium nitride; Analytical models; Electric variables; Gallium nitride; HEMTs; Insulation; MODFETs; Metal-insulator structures; Microwave devices; Performance analysis; AlGaN/GaN; Drain current; Gate voltage swing; MISHFET; Polarization;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4554632
