Title :
Terahertz Frequency Performance of Double Drift IMPATT Diode Based on Opto-Sensitive Semiconductor
Author :
Mukherjee, Moumita ; Mazumder, N. ; Roy, Sitesh Kumar ; Goswami, Kushalendu
Author_Institution :
Dept. of Appl. Phys., Visva Bharati Univ., Kolkata
Abstract :
Terahertz characteristics of opto-sensitive InP based double drift IMPATT diode with and without optical radiation are studied and the results are compared with another opto sensitive semiconductor 4H-SiC based IMPATT at same operating frequency (0.5 THz) . The effects of parasitic series resistance on the THz frequency performance of the simulated InP based diode is also analysed. Unilluminated IMPATT diode based on 4H-SiC are found to perform better than unilluminated InP based IMPATT in terms of power output and efficiency. But, under optical illumination, the modulation of dynamic properties of double drift InP diode is found to be more prominent than that of SiC based IMPATT operating under similar condition. These studies reveal the potential of InP IMPATT as optically controlled high speed THz switch.
Keywords :
III-V semiconductors; IMPATT diodes; indium compounds; microwave photonics; optical control; optical switches; semiconductor switches; silicon compounds; submillimetre wave diodes; wide band gap semiconductors; 4H-SiC based IMPATT; H-SiC; InP; double drift IMPATT diode; double drift InP diode; frequency 0.5 THz; optical illumination; optically controlled high speed THz switch; opto-sensitive semiconductor; parasitic series resistance; simulated InP based diode; terahertz frequency performance; unilluminated IMPATT diode; Analytical models; Frequency; High speed optical techniques; Indium phosphide; Lighting; Optical control; Optical modulation; Optical sensors; Performance analysis; Semiconductor diodes;
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4554634
