• DocumentCode
    1972791
  • Title

    Large signal statistical compact model for LF noise

  • Author

    Wirth, Glen

  • Author_Institution
    Electr. Eng. Dept., UFRGS, Porto Alegre, Brazil
  • fYear
    2013
  • fDate
    13-17 Oct. 2013
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    We have performed statistical compact modeling of low-frequency (LF) noise in MOSFETs under large signal periodic (AC or cyclo-stationary) excitation, addressing relevant open issues in the literature. In the present work we introduce an equivalent Fermi level for cyclo-stationary excitation, unifying modeling of LF noise under constant (DC) bias and large signal periodic excitation. Results are compared to relevant experimental data from the literature, and Monte Carlo simulations are performed. The model is optimized for implementation into standard circuit simulators.
  • Keywords
    Fermi level; MOSFET; Monte Carlo methods; circuit simulation; semiconductor device models; semiconductor device noise; statistical analysis; MOSFETs; Monte Carlo simulations; cyclo-stationary excitation; equivalent Fermi level; large signal statistical compact model; low-frequency noise; signal periodic excitation; standard circuit simulators; Equations; Integrated circuit modeling; Low-frequency noise; Mathematical model; Noise reduction; Standards; MOSFET; compact modeling; low-frequency noise; random telegraph noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4799-0350-4
  • Type

    conf

  • DOI
    10.1109/IIRW.2013.6804176
  • Filename
    6804176