DocumentCode
1972791
Title
Large signal statistical compact model for LF noise
Author
Wirth, Glen
Author_Institution
Electr. Eng. Dept., UFRGS, Porto Alegre, Brazil
fYear
2013
fDate
13-17 Oct. 2013
Firstpage
129
Lastpage
132
Abstract
We have performed statistical compact modeling of low-frequency (LF) noise in MOSFETs under large signal periodic (AC or cyclo-stationary) excitation, addressing relevant open issues in the literature. In the present work we introduce an equivalent Fermi level for cyclo-stationary excitation, unifying modeling of LF noise under constant (DC) bias and large signal periodic excitation. Results are compared to relevant experimental data from the literature, and Monte Carlo simulations are performed. The model is optimized for implementation into standard circuit simulators.
Keywords
Fermi level; MOSFET; Monte Carlo methods; circuit simulation; semiconductor device models; semiconductor device noise; statistical analysis; MOSFETs; Monte Carlo simulations; cyclo-stationary excitation; equivalent Fermi level; large signal statistical compact model; low-frequency noise; signal periodic excitation; standard circuit simulators; Equations; Integrated circuit modeling; Low-frequency noise; Mathematical model; Noise reduction; Standards; MOSFET; compact modeling; low-frequency noise; random telegraph noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4799-0350-4
Type
conf
DOI
10.1109/IIRW.2013.6804176
Filename
6804176
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