DocumentCode :
1972859
Title :
Very Smooth AIGaAs-GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition
Author :
Dupuis, Russell D. ; Neff, James G. ; Pinzone, Christopher J.
Author_Institution :
Department of Electrical and Computer Engineering, The University of Texas at Austin
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
117
Lastpage :
118
Keywords :
Chemical vapor deposition; Epitaxial growth; Gallium arsenide; MOCVD; Microelectronics; Molecular beam epitaxial growth; Quantum well devices; Quantum well lasers; Substrates; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664970
Filename :
664970
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1972859
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